Three different diffusion models in SiGeC layers were compared and evaluated for their implementation in a process simulation program. The models considered in the evaluation were verified for actual process conditions of modern SiGeC heterojunction bipolar transistors in bipolar complementary metal-oxide-semiconductor technologies. Rapid thermal annealing at 1020 to 1070C was used for the present study. It was shown here that the compared models were similar to each other, in spite of the different physical approach. A common set of coefficients was used for the simulations of the 3 models under study

A Comprehensive Study of Boron and Carbon Diffusion Models in SiGeC Heterojunction Bipolar Transistors. A.Sibaja-Hernandez, S.Decoutere, H.Maes: Journal of Applied Physics, 2005, 98[6], 063530 (9pp)