The application of high-resolution X-ray diffraction for detecting and distinguishing defects in SiGe(C) layers was presented. A depth profile of the defects in SiGe/Si multi-layers was performed by using high-resolution reciprocal lattice mapping at different asymmetric reflections. Transmission electron microscopy was also applied in order to observe defects in the layers and these results were linked with the X-ray analysis. The substitutional C or B concentration in SiGe was measured by the shift of layer peak compared to the intrinsic layers. The thermal stability of the SiGe layers was investigated in order to rank the epitaxial quality of the SiGe below the detection limit of X-ray technique. It had also been demonstrated that X-ray analysis could be used for in-line process monitoring of layers grown in small device openings on patterned substratesThese types of analysis had also been used routinely for the evaluation of processed samples.

Application of High-Resolution X-ray Diffraction for Detecting Defects in SiGe(C) Materials. H.H.Radamson, J.Hållstedt: Journal of Physics - Condensed Matter, 2005, 17[22], S2315-22

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