The effect of fast neutron (energy >0.1MeV) irradiation on electrical properties and deep level spectra of undoped n-AlGaN films with Al mole fraction x = 0.4 were presented. In virgin samples, the properties were strongly influenced by deep traps at Ec–0.25eV present in high concentrations (~2.5 x 1018/cm3). Neutron irradiation to doses higher than 1015/cm2 led to compensation of these centers with a removal rate of about 500/cm. After neutron irradiation with high dose of 1.7 x 1017/cm2 the samples became resistive (>104Ωcm), with the Fermi level pinned by new centers near Ec–0.35eV introduced by irradiation with a rate of about 10/cm. Neutron irradiation also gave rise to an increase in the concentration of deep hole traps with an activation energy of 1eV.

Neutron Irradiation Effects in Undoped n-AlGaN. A.Y.Polyakov, N.B.Smirnov, A.V.Govorkov, A.V.Markov, N.G.Kolin, V.M.Boiko, D.I.Merkurisov, S.J.Pearton: Journal of Vacuum Science and Technology B, 2006, 24[3], 1094-7