An optically detected magnetic resonance study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates was presented. A number of grown-in defects were observed which act as non-radiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian led to the identification of 2 Gai defects. A comparison with similar defects in other phosphide-based diluted nitride III-V compounds, such as GaAlNP and GaInNP, permitted the obtention of additional information concerning the nearest surroundings of the defects. Possible models for other defects observed in the experiments were considered.

Optically Detected Magnetic Resonance Studies of Point Defects in Ga(Al)NAs. I.P.Vorona, T.Mchedlidze, D.Dagnelund, I.A.Buyanova, W.M.Chen, K.Köhler: Physical Review B, 2006, 73[12], 125204 (6pp)