The effect of annealing on the photoluminescence in GaAsSbN/GaAs quantum wells grown by solid-source molecular-beam epitaxy was investigated. The annealing time and temperature were 300s and 650 to 750C. Low-temperature (4K) photoluminescence peaks shifted to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the hetero-interface was proposed to model this effect. The compositional profile of the quantum wells after interdiffusion was described by an error-function distribution and calculated by using a ten-band kp method. The estimated interdiffusion constants D were ~10–17 to 10–16cm2/s in the above temperature range and an activation energy of 1eV was deduced.

Study of Interdiffusion in GaAsSbN/GaAs Quantum Well Structure by Ten-Band kp Method. Y.X.Dang, W.J.Fan, S.T.Ng, S.Wicaksono, S.F.Yoon, D.H.Zhang: Journal of Applied Physics, 2005, 98[2], 026102 (3pp)