The interdiffusion effect of GaInNAs/GaAs single quantum well was investigated with the 8-band kp method. The as-grown 64Å Ga0.64In0.36N0.017As0.983/250Å GaAs quantum well was experimentally determined to emit at 1.27µm. The compositional profile of the quantum well after interdiffusion was modeled by an error function distribution. Varying the diffusion length, the effects of interdiffusion on the unstrained band gap, in-plain strain, and confinement profiles were studied. The curve of the ground-state transition (C1-HH1) energy dependence on the interdiffusion length was obtained. The work showed that the interdiffusion effect upon the strain could greatly change the confinement profile of the light-hole, which was confined to the GaAs layer, not in the GaInNAs layer. From the transition energy curve, a blue-shift of 51meV was derived. This interdiffusion mechanism could be used in the tuning of the laser operation wavelength.

Study of Interdiffusion in GaInNAs/GaAs Quantum Well Structure Emitting at 1.3µm by Eight-Band kp Method. Y.X.Dang, W.J.Fan, S.T.Ng, S.F.Yoon, D.H.Zhang: Journal of Applied Physics, 2005, 97[10], 103718 (6pp)