Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results showed that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicated that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency.

Defect Influence on Luminescence Efficiency of GaN-Based LEDs. S.Li, Z.Fang, H.Chen, J.Li, X.Chen, X.Yuan, T.Sekiguchi, Q.Wang, J.Kang: Materials Science in Semiconductor Processing, 2006, 9[1-3], 371-4