The defect structure of periodic Si delta-doping (δ-doping) GaN films grown by low-pressure metalorganic chemical vapor deposition was investigated by high-resolution X-ray diffraction. Rocking curves of 5 planes were investigated: (0002), (10▪3), (10▪2), (10▪1) and (20▪1), respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. The effects of Si δ-doping on the different types of dislocation were considered. It was demonstrated that Si δ-doping significantly reduced the threading dislocations with a pure edge character, and induced no changes in the threading dislocations with a screw component. The results were consistent with atomic force microscopy data.

Reduction of Threading Edge Dislocation Density in n-type GaN by Si Delta-Doping. Y.B.Pan, Z.J.Yang, Z.T.Chen, Y.Lu, T.J.Yu, X.D.Hu, K.Xu, G.Y.Zhang: Journal of Crystal Growth, 2006, 286[2], 255-8