The partial dislocations in wurtzite-structured GaN were reviewed and new results were presented. A multiplicity of partials was possible depending on stacking fault type, orientation, and interactions. The partials that delimit the I1 intrinsic basal stacking faults had 5/7, 8, or 12-atom cores as more probable configurations. The core structures of 90° partial dislocations with 1/6<20▪3> Burgers vector were studied from high resolution transmission electron microscopy observations in comparison with simulated models obtained from energetic calculations. Two cases were distinguished with one structure involving a 5/7 or 12-atom ring core and the other an 8-atom ring core. Another type of partials, in particular dislocations accommodating mirror variants of basal stacking faults were also studied experimentally.

Partial Dislocations in Wurtzite GaN. P.Komninou, J.Kioseoglou, G.P.Dimitrakopulos, T.Kehagias, T.Karakostas: Physica Status Solidi A, 2006, 202[15], 2888-99