Measurements were made of the thermal conductivity of thick free-standing GaN films prepared by hydride vapor phase epitaxy. The fabrication method permitted the growth of low-dislocation density films without the use of non-native substrates. The experimental data showed that the room-temperature thermal conductivity in free-standing GaN films could be as high at 225W/mK, which was a factor of 1.8 increase when compared to a reference GaN film grown on a sapphire substrate. Modeling, performed for the given sample parameters, indicated that the low-temperature thermal conductivity could reach a record value of 7460W/mK.

Increased Thermal Conductivity of Free-Standing Low-Dislocation-Density GaN Films. W.Liu, A.A.Balandin, C.Lee, H.Y.Lee: Physica Status Solidi A, 2006, 202[12], R135-7