Epitaxial layers of cubic GaN were grown, using metal-organic vapour-phase epitaxy, with Si-doping carrier concentrations ranging from 3 x 1018 to 2.4 x 1020/cm3. The Si-doping decreased the yellow emission, but induced a phase transformation. As the Si concentration was increased, the incidence of hexagonal GaN nano-particles increased. Data on the line-widths of X-ray rocking curves suggested that the Si-doping increased the density of dislocations and stacking faults.

Effect of Si Doping on Cubic GaN Films Grown on GaAs(100) D.Xu, H.Yang, J.B.Li, S.F.Li, Y.T.Wang, D.G.Zhao, R.H.Wu: Journal of Crystal Growth, 1999, 206[1-2], 150-4