The photoluminescence annealing of metal-organic chemical vapour deposited multi quantum wells was studied. The occurrence of phase separation in the InGaN quantum well layer was confirmed by photoluminescence mapping when the multi quantum well was grown at 675C. The spatial distribution of the yellow-band photoluminescence was linked to the dislocation network, in that the intensity of the photoluminescence was lowest at grain boundaries. The cause of the yellow band was explained in terms of radiative donor-acceptor recombination.

Annealing of GaN-InGaN Multi Quantum Wells - Correlation between the Bandgap and Yellow Photoluminescence S.Juodkazis, P.G.Eliseev, M.Watanabe, H.B.Sun, S.Matsuo, T.Sugahara, S.Sakai, H.Misawa: Japanese Journal of Applied Physics - 1, 2000, 39[2A], 393-6