The influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells was investigated by triple-axis X-ray diffraction, transmission electron microscopy, and photoluminescence spectra. The ω-scan of every satellite peak by triple-axis X-ray diffraction was adopted to evaluate the mean screw and edge dislocation densities in multi-quantum-wells. The results showed that dislocations could lead to a reduction of the photoluminescence-integrated intensity of InGaN/GaN multi-quantum-wells under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations could broaden the photoluminescence peak, but the effect became evident only under the condition when the interface roughness was relatively low.

Influence of Dislocations on Photoluminescence of InGaN/GaN Multiple Quantum Wells. J.C.Zhang, D.S.Jiang, Q.Sun, J.F.Wang, Y.T.Wang, J.P.Liu, J.Chen, R.Q.Jin, J.J.Zhu, H.Yang, T.Dai, Q.J.Jia: Applied Physics Letters, 2005, 87[7], 071908 (3pp)