Dilute-nitride Ga0.44In0.56NyP1–y alloys with y = 0 to 0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, were studied by the optically detected magnetic resonance technique. Grown-in paramagnetic defects were found to act as centers of non-radiative recombination. Resolved hyperfine structure for one of the detected optically detected magnetic resonance signals suggested involvement of a Ga-interstitial or an As-antisite in the structure of the related defect.

Magnetic Resonance Signatures of Grown-In Defects in GaInNP Alloys Grown on a GaAs Substrate. I.P.Vorona, T.Mchedlidze, M.Izadifard, I.A.Buyanova, W.M.Chen, Y.G.Hong, H.P.Xin, C.W.Tu: Applied Physics Letters, 2005, 86[22], 222110 (3pp)