An InxGa1-xP1-yNy/GaP0.982N0.018 double-heterostructure light-emitting diode was fabricated on a Si substrate using solid-source molecular beam epitaxy with a radio-frequency plasma N source. It was confirmed by high resolution X-ray diffraction analysis that the structure of the light-emitting diode had a small lattice mismatch to the Si substrate. A cross-sectional image obtained by transmission electron microscopy revealed that there were no threading dislocations in the epitaxial layers. The electroluminescence properties were also evaluated. The electroluminescence peak wavelength of an InxGa1-xP1-yNy/GaP0.982N0.018 double-heterostructure light-emitting diode was 665nm at room temperature when the In (x) and N (y) contents were 4.0 and 3.8%, respectively. A relatively wide electroluminescence spectrum was obtained. These specific features of electroluminescence spectra could be attributed to a long band tail formed by N in the InxGa1-xP1-yNy active layer.

Dislocation-Free InxGa1-xP1-yNy/GaP1-zNz Double-Heterostructure Light Emitting Diode on Si Substrate. S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara: Japanese Journal of Applied Physics, 2005, 44[4A], 1752-5