High-energy particle irradiation was shown previously to be a method for n-type doping of InN. Here, InN was irradiated with H+ and He+ particles in order to study the dependence of the electron mobility upon electron concentrations varying from mid-1018 to mid-1020/cm3. It was found that the electron mobility was limited by scattering from the ionized defects created by irradiation; resulting in a strong correlation between mobility and electron concentration. The calculations also suggested that the radiation-induced defects could be triply-charged donors.

Native-Defect-Controlled n-Type Conductivity in InN. R.E.Jones, S.X.Li, L.Hsu, K.M.Yu, W.Walukiewicz, Z.Liliental-Weber, J.W.Ager, E.E.Haller, H.Lu, W.J.Schaff: Physica B, 2006, 376-377, 436-9