Synchrotron-based near-edge X-ray absorption fine structure spectroscopy was used to study the electronic structure of N-related defects in InN(00▪1). Several defect levels within the band-gap or the conduction band of InN were clearly resolved in near-edge X-ray absorption fine structure spectra around the nitrogen K-edge. A level observed at 0.3eV below the conduction band minimum was attributed to interstitial N, a level at 1.7eV above the conduction band minimum was attributed to antisite N and a sharp resonance at 3.2eV above the conduction band minimum was attributed to molecular N, in full agreement with theoretical simulations.

Direct Observation of Defect Levels in InN by Soft X-ray Absorption Spectroscopy. M.Petravic, P.N.Deenapanray, M.D.Fraser, A.V.Soldatov, Y.W.Yang, P.A.Anderson, S.M.Durbin: Journal of Physical Chemistry B, 2006, 110[7], 2984-7