Non-radiative line defects were observed, by means of cathodoluminescence, in <¯21•0> directions in [1¯1•0]-oriented GaN stripes which had been grown, via lateral epitaxy, onto SiC substrates. By means of transmission electron microscopy, the main source was found to be screw dislocations. The latter were observed in vertically [00•1] stacked configurations, and formed dislocation loops and half-loops that were located on 2 of the 3 planes of the form: {1¯1•0}. The dislocations were suggested to relax the anisotropic stresses that were present in the lateral epitaxy-overgrown stripes.

Origin of the Non-Radiative <11•0> Line Defect in Lateral Epitaxy-Grown GaN on SiC Substrates P.Hacke, K.Domen, A.Kuramata, T.Tanahashi, O.Ueda: Applied Physics Letters, 2000, 76[18], 2547-9