Transmuted impurities, Ge and S, in neutron transmutation-doped semi-insulating material were studied by using photoluminescence methods. A broad emission was observed at 1.65eV, accompanied by a peak at about 1.87eV in samples which had been annealed above 640C. These emissions were attributed to GeGa-GeP complexes and S-donor plus Ge-acceptor pair recombination, respectively; thus indicating the presence of the transmuted impurities. The formation of the complex defect was examined by using a configuration coordinate model. The presence of the complex defects restricted electrical activation of the transmuted impurities.

Photoluminescence from Transmuted Impurities in Neutron Transmutation-Doped Semi-Insulating GaP K.Kuriyama, K.Ohbora, M.Okada: Solid State Communications, 2000, 113[7], 415-8