Films of LaAlO3, sputter-deposited onto Si, were submitted to rapid thermal annealing at 800 and 1000C. Atomic transport and chemical changes were investigated by using ion beam analysis and X-ray photoelectron spectroscopy. Annealing induced La and Al losses or their migration into a newly formed interfacial layer and Si migration into the film. The mechanism of Si incorporation into the film was affected by the annealing atmosphere. These instabilities were hampered by thermal nitridation in NH3 at 700C; performed prior to rapid thermal annealing.

Atomic Transport in LaAlO3 Films on Si Induced by Thermal Annealing. L.Miotti, C.Driemeier, F.Tatsch, C.Radtke, V.Edon, M.C.Hugon, O.Voldoire, B.Agius, I.J.R.Baumvol: Electrochemical and Solid-State Letters, 2006, 9[6], F49-52