Stacking-fault double ribbons were observed, using transmission electron microscopy, in undoped GaP films which were grown onto Si. Extrinsic and intrinsic stacking-fault energies of 40.5 and 43.4mJ/m2, respectively, were deduced from measurements of the widths of individual ribbons. The ratio of the intrinsic to extrinsic stacking-fault energies was found to be 1.07.

Evaluation of the Extrinsic and Intrinsic Stacking-Fault Energies of GaP D.Cohen, C.B.Carter: Philosophical Magazine A, 1999, 79[8], 1805-15