The microstructures of epitaxial islands which had been grown onto Si(001) or Si(111) by means of chemical beam epitaxy were investigated by using transmission electron microscopy. The results indicated that planar-defect free islands of up to 20nm could be produced at 560C on Si(001). Some of the islands were faceted on {111} and {113} planes. Subsequent planar defect formation occurred due to stacking errors on the smaller {111} facets of GaP islands that could have been P-terminated. These stacking errors were attributed to the low surface mobility on P-terminated facets. A high density of planar defects was observed in smaller islands which were grown on Si(001) at 420C. This was a consequence of the reduced atomic mobility, at low temperatures, that led to {111} stacking errors.

Origins of Defects in Self-Assembled GaP Islands Grown on Si(001) and Si(111) V.Narayanan, N.Sukidi, K.J.Bachmann, S.Mahajan: Thin Solid Films, 1999, 357[1], 53-6