The synthesis of well-aligned high-density vertical single-crystal ZnO nanowires on indium tin oxide-buffered Si substrates at 550C for 0.5h was reported. It was found that the average length and diameter of the ZnO nanowires were around 3.5µm and 30nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

Indium-Diffused ZnO Nanowires Synthesized on ITO-Buffered Si Substrate. C.L.Hsu, S.J.Chang, Y.R.Lin, J.M.Wu, T.S.Lin, S.Y.Tsai, I.C.Chen: Nanotechnology, 2006, 17, 516-9