The current density versus time (J-t) characteristics of yttria-stabilized-zirconia (YSZ) films on Si(001) below 150C were measured. By the application of a negative voltage up to 20V to the Al top electrode, a current peak was observed. The peak evolution was considered on the basis of the space-charge-limited current transient of O vacancy (model-1), and the modulation of electronic conductivity upon O vacancy redistribution (model-2). From the point of view of the activation energy and the relative dielectric constant estimation, model-2 gave a more plausible value. It was also observed, based on J-t measurements, that Nb-doping caused the suppression of O vacancies.

Activation Energy of Oxygen Vacancy Diffusion of Yttria-Stabilized-Zirconia Thin Film Determined from DC Current Measurements Below 150C. N.Wakiya, N.Tajiri, T.Kiguchi, N.Mizutani, J.S.Cross, K.Shinozaki: Japanese Journal of Applied Physics, 2006, 45[20], L525-8