The conversion processes of Ge-related point defects triggered in amorphous SiO2 by 4.7eV laser exposure were investigated. The study focused on the interplay between the (=Ge▪-H) H(II) center and the twofold coordinated Ge defect (=Ge▪▪). The former was generated in the post-irradiation stage, while the latter decayed both during and after exposure. The post-irradiation decay kinetics of =Ge▪▪ were isolated and found to be anticorrelated to the growth of H(II), at least at short times. From this finding it was suggested that both processes were due to trapping of radiolytic H0 at the diamagnetic defect site. The anticorrelated behavior was also preserved under repeated irradiation. Light at 4.7eV destroyed the already formed H(II) centers and restored their precursors = Ge▪▪. This process led to repeatability of the post-irradiation kinetics of the 2 species after multiple laser exposures. A comprehensive scheme of chemical reactions was proposed which explained the observed post-irradiation processes.Hydrogen-Related Conversion Processes of Ge-Related Point Defects in Silica Triggered by Ultraviolet Laser Irradiation. F.Messina, M.Cannas: Physical Review B, 2005, 72[19], 195212 (7pp)