The diffusion of In in single crystals was measured by using ion-beam sputtering methods at 553 to 838K. The results could be described by:

D (cm2/s) = 3.6 x 10-5 exp[-1.75(eV)/kT]

H.Mehrer, D.Weiler: Zeitschrift für Metallkunde, 1984, 75[3], 203-5

Table 9

Grain-Boundary Diffusion (Type-B Regime) of 63Ni in Ag

 

Temperature (K)

sδD (m3/s)

989

4.47 x 10-19

920

1.96 x 10-19

874

1.31 x 10-19

873

1.42 x 10-19

849

1.20 x 10-19

821

7.15 x 10-20

741

1.16 x 10-20