Electron microprobe methods were used to study the diffusion of Si in thin-films at 475 to 550C. The results could be described by:

D (cm2/s) = 8.3 x 10-3 exp[-0.81(eV)/kT]

A.Paccagnella, G.Ottaviani, P.Fabbri, G.Ferla, G.Queirolo: Thin Solid Films, 1985, 128[3-4], 217-23