The diffusion of Be during post-growth rapid thermal annealing was studied in epitaxial structures which had been grown by using gas-source molecular beam epitaxy. The secondary ion mass spectrometric concentration distributions, after imposing annealing cycles with durations of 10 to 240s, and temperatures of 700 to 900C, at a Be dopant concentration of 3 x 1019/cm3, could be explained in terms of a kick-out mechanism which involved neutral Be interstitial species and positively-charged group-III self-interstitials.

Be Diffusion in InGaAs, InGaAsP Epitaxial Layers and across InGaAs/InGaAsP, InGaAs/InP Heterointerfaces S.Koumetz, J.Marcon, S.Gautier, K.Ketata, M.Ketata, C.Dubois: Materials Science and Engineering B, 1999, 66[1-3], 55-7