The removal of H from C-doped InGaAs, grown onto InP substrates by means of metal-organic chemical vapour deposition, was studied with regard to the dependence of the hole concentration upon the annealing conditions. It was found that the H removal rate became higher as the annealing temperature was increased. The activation energy for H removal was equal to about 1.9eV, regardless of the C-doped layer thickness. The removal rate was also found to be inversely proportional to the C-doped layer thickness. This suggested that the H removal reaction was governed mainly by H diffusion.

Hydrogen Removal by Annealing from C-Doped InGaAs Grown on InP by Metalorganic Chemical Vapor Deposition N.Watanabe, S.Yamahata, T.Kobayashi: Journal of Crystal Growth, 1999, 200[3-4], 599-602