It was recalled that migration from a masked region, and lateral vapour-phase diffusion were involved in growth-rate enhancement and compositional changes during InGaAsP/InP selective metal-organic vapour-phase epitaxy. A novel threshold mask width was proposed at which lateral vapour-phase diffusion started to occur. When the mask width was below the threshold, the main mechanism of selective epitaxy was surface migration from the dielectric mask region. Lateral vapour-phase diffusion was then very small. But when the mask width was above the threshold, the main mechanism of selective epitaxy changed to lateral vapour-phase diffusion.

Surface Migration Effect and Lateral Vapor-Phase Diffusion Effect for InGaAsP/InP Narrow-Stripe Selective Metal-Organic Vapor-Phase Epitaxy Y.Sakata, Y.Inomoto, K.Komatsu: Journal of Crystal Growth, 2000, 208[1-4], 130-6