The diffusion of Ti in monocrystalline samples was studied at temperatures ranging from 621 to 747K. Ion-beam sputtering and secondary ion mass spectrometry were used to determine concentration depth profiles. It was found that the results could be described by the expressions:

D (m2/s) = 3.7 x 10-5 exp[-1.99(eV)/kT]

These results were consistent with previous high-temperature data. A curvature of the overall Arrhenius plot was attributed to a contribution which arose from divacancies at high temperatures.

A.Almazouzi, M.P.Macht, V.Naundorf, G.Neumann: Physica Status Solidi A, 1998, 167[1], 15-28

Table 94

Interdiffusion in the Sn/Cu System

 

Temperature (C)

D (m2/s)

77

5.96 x 10-22

120

4.60 x 10-21

150

6.63 x 10-21

200

2.23 x 10-20

250

5.32 x 10-20