Thermally (figure 17) and radiation-enhanced diffusion (figure 18) in thin films of the order-disorder alloy, above and below the transition temperature, was analyzed. It was demonstrated that thin films, grown using molecular beam epitaxy, were uniquely suited for such experiments because the surface provided a predominant and well-characterized sink for migrating defects. The analysis was applied to recent experiments, and quantitative predictions of radiation-enhanced diffusion agreed closely with experimental values. An analysis of tracer-impurity thermal diffusion experiments provided host diffusion coefficients over a temperature range around the transition temperature.

Y.S.Lee, C.P.Flynn, R.S.Averback: Physical Review B, 1999, 60[2], 881-9