Cubic heterostructures were grown onto GaAs(001) substrates by means of metal-organic vapour phase epitaxy. Structural defects were investigated by performing X-ray reciprocal space-mapping measurements. It was found that the cubic InGaN layers contained high densities of stacking faults which lay parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN <111>A directions, rather than the <111>B directions.

Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y.Taniyasu, Y.Watanabe, D.H.Lim, A.W.Jia, M.Shimotomai, Y.Kato, M.Kobayashi, A.Yoshikawa, K.Takahashi: Physica Status Solidi A, 1999, 176[1], 397-400