It was recalled that, when acceptors diffused into an n-type semiconductor, both the surface concentration and the diffusion depth of the diffusant were affected by the initial donor concentration. Similar interactions were observed between shallow acceptors and deep acceptors. Previous work on the diffusion of Zn during the metal-organic chemical vapour deposition of InP was reviewed and was compared with the diffusion of both Zn and Cd into InP from the vapour phase. Interdiffusion between Fe-doped and Zn-doped metal-organic chemical vapour deposited layers was also considered. It was shown that the results could all be explained by using a simple model which involved Fermi-level effects.

Diffusion of Acceptors in n-Type and Semi-Insulating InP B.Tuck: Journal of Crystal Growth, 2000, 208[1-4], 123-9