Experiments were described in which both Zn and Cd diffused and interacted. When Zn was diffused into Cd-doped material, the presence of Cd increased the penetration depth of Zn. The presence of the diffusing Zn greatly increased the rate of out-diffusion of Cd. It was suggested that both elements diffused via a substitutional-interstitial mechanism, and that the interaction between them was a consequence of their both influencing the local concentration of holes. Simulations which were performed using the model showed a good agreement with experiment.

Interaction of p-Type Dopants during Diffusion in InP B.Tuck, F.R.Shepherd, G.Kelly, A.Margittai: Semiconductor Science and Technology, 2000, 15[3], 254-8