Crystals were grown by using the horizontal Bridgman method under a controlled ambient P vapour pressure. Those which were grown under lower P vapour pressures had an In-rich composition. The dislocation density, etch-pit density and full-width at half-maximum of X-ray diffraction were all minimized by a specific P pressure of between 20 and 29atm. Reciprocal-space mapping measurements showed that crystals grown under high or low P vapour pressures consisted of mosaic domains which were surrounded by tilted boundaries.

Dislocation Densities in InP Single Crystals Grown under Controlled Phosphorus Vapor Pressure by the Horizontal Bridgman Method A.Shimizu, J.Nishizawa, Y.Oyama, K.Suto: Journal of Crystal Growth, 2000, 209[1], 21-6