Lateral coalescence was studied during micro-channel epitaxial growth. It was suggested that there were 2 modes of coalescence; so-called one-zipper and two-zipper. New micro-channel patterns were designed in order to demonstrate these 2 modes. The coalesced islands were chemically etched, and it was found that dislocations were usually generated in the coalesced region when growth was carried out in two-zipper mode. When growth occurred in one-zipper mode, no dislocations were found in the coalesced region. It was concluded that, by using the one-zipper growth mode, dislocation formation in the coalesced region could be avoided.

Coalescence in Microchannel Epitaxy of InP Z.Yan, Y.Hamaoka, S.Naritsuka, T.Nishinaga: Journal of Crystal Growth, 2000, 212[1-2], 1-10