The transport properties of low-temperature InP/InGaAs/InP heterostructures and low-temperature InP thin films were studied. Hall-effect measurements were performed at hydrostatic pressures of up to 1.5Gpa, and temperatures ranging from 4.2 to 250K, for both types of sample. Shubnikov-DeHaas experiments were also performed on the heterostructures. The results clearly revealed the metastable nature of the P antisite defects in the low-temperature InP layers.

Metastability of the Phosphorus Antisite Defect in Low-Temperature InP J.Mikucki, M.Baj, D.Wasik, W.Walukiewicz, W.G.Bi, C.W.Tu: Physical Review B, 2000, 61[11], 7199-202