As-grown undoped n-type semiconducting, and annealed undoped semi-insulating, liquid encapsulated Czochralski material was studied by using temperature-dependent Hall measurements, photoluminescence spectroscopy, infra-red absorption, and photocurrent spectroscopy. The p-type conductive material could be obtained by annealing undoped liquid encapsulated Czochralski material. This was caused by a high concentration of thermally-induced native acceptor defects. In some cases, the thermally induced n-type semi-insulating property of undoped liquid encapsulated Czochralski material was caused by a mid-gap donor which compensated shallow acceptors. The mid-gap donor was suggested to be a P antisite related defect.

Compensation Defects in Annealed Undoped Liquid Encapsulated Czochralski InP S.Fung, Y.W.Zhao, X.L.Xu, X.D.Chen, N.F.Sun, T.N.Sun, R.G.Zhang, S.L.Liu, G.Y.Yang, X.B.Guo, Y.Z.Sun, R.Y.Yan, Q.H.Hua: Journal of Applied Physics, 1999, 86[2], 951-5