The bulk diffusivity was measured by using serial sectioning methods (sputtering by Ar ions in a direct-current glow discharge) at temperatures of 893 and 953K (table 167). It was proved that the contribution which constitutional vacancies made to the bulk diffusion mobility of Ni atoms was negligible at temperatures down to 893K.

J.Cermák, I.Stloukal: Scripta Materialia, 1997, 36[4], 433-7

 

Table 165

Bulk Diffusivity of 67Ga in Ni3Al

 

Al(at%)

Temperature(K)

D(m2/s)

24.8

1373

1.5 x 10-15

24.8

1273

1.2 x 10-16

23.8

1373

2.2 x 10-15

23.8

1273

1.7 x 10-16

23.8

1173

9.5 x 10-18

22.4

1373

3.5 x 10-15

22.4

1273

3.6 x 10-16

22.4

1173

2.0 x 10-17

Table 166

Grain Boundary Diffusivity of 67Ga in Ni3Al

 

Al(at%)

Temperature(K)

P(m3/s)

24.8

1173

2.6 x 10-20

24.8

1073

6.6 x 10-21

24.8

973

3.6 x 10-22

24.8

873

3.0 x 10-23

24.8

773

1.2 x 10-24

23.8

1173

5.6 x 10-20

23.8

1073

8.6 x 10-21

23.8

973

7.1 x 10-22

23.8

873

4.8 x 10-23

23.8

773

1.6 x 10-24

22.4

1173

9.5 x 10-20

22.4

1073

1.9 x 10-20

22.4

973

2.3 x 10-21

22.4

873

8.1 x 10-23

22.4

773

2.5 x 10-24