The photosensitization of n-type single crystals after irradiation with nanosecond ruby laser pulses was studied. On the basis of a study of the photoconductivity spectra, it was concluded that the surface recombination rate decreased in samples which were subjected to sub-threshold irradiation. The steady-state photoconductivity, non-equilibrium carrier lifetime and resistivity increased. Changes in the photo-electric properties of the crystals were attributed to cleaning of the surface and to gettering of electrically active point defects by extended growth defects.

Photosensitization of InSb Crystals by Pulsed Laser Irradiation V.A.Gnatyuk: Journal of Physics D, 1999, 32[20], 2687-91