The non-linear enhancement of solvent diffusion by Si was measured (table 209) at 1330 to 1470K, using 59Co rather than a Ni tracer. By using a suitable model, vacancy-impurity binding free enthalpies of about –0.20eV were estimated from the enhancement factors.

F.Faupel, C.Kostler, K.Bierbaum, T.Hehenkamp: Journal of Physics F, 1988, 18[2], 205-12