High-grade MgB2(00▪1) films were grown on Mg(00▪1) by means of ultra-high-vacuum molecular beam epitaxy. Low-energy electron diffraction and X-ray diffraction data indicated that thick films were formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent X-ray absorption measurements. For the first time, the band mapping along the Γ-A direction was reported, and the of the electron–phonon coupling constant was estimated to be 0.55 for the surface state electrons.

Characterization of High-Quality MgB2(0001) Epitaxial Films on Mg(0001). L.Petaccia, C.Cepek, S.Lizzit, R.Larciprete, R.Macovez, M.Sancrotti, A.Goldoni: New Journal of Physics, 2006, 8, 12