Superconducting MgB2 thin films were grown onto single crystal Al2O3 (00▪1) by chemical vapour deposition, using B2H6 as a B source. The MgB2 film was then accomplished by annealing the B precursor films in the presence of high-purity bulk Mg at 890C in vacuum. The as-grown MgB2 films were smooth and c-axis-oriented. The films exhibited a zero-resistance transition of about 38K, with a narrow transition width of 0.2K. Magnetic hysteresis measurements yielded a critical current density of 1.9 x 107A/cm2 at 10K in zero field.

Growth of MgB2 Thin Films by Chemical Vapour Deposition Using B2H6 as a Boron Source. S.F.Wang, Y.B.Zhu, Z.Liu, Y.L.Zhou, Q.Zhang, Z.H.Chen, H.B.Lu, G.Z.Yang: Chinese Physics Letters, 2003, 20, 1356-8