The binding energy of H with grain boundaries was determined in nanocrystalline specimens by using Fourier-transformed infra-red absorption spectroscopy and isothermal annealing. The diffusivity along grain boundaries was calculated by modelling D diffusion concentration profiles, and was found to be equal to 1.6 x 10-13cm2/s at l700C.

Hydrogen Diffusion and Trapping in Microcrystalline Silicon D.Ballutaud, L.Lusson, A.Boutry-Forveille, A.Lusson: Solid State Phenomena, 1999, 69-70, 571-6