The effects of AlN buffer layers on the superconducting properties of MgB2 thin film were investigated. The AlN buffer layers and as-grown MgB2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290C. The crystallinity of the AlN/MgB2 bi-layer was studied using the XRD -scan and it showed that AlN and MgB2 had the same in-plane alignment rotated at an angle of 30° as compared to c-cut sapphire. The critical temperature of the MgB2 film was 29.8K and the resistivity was 50.0μΩ cm at 40K.

Crystallinity and Superconductivity of As-Grown MgB2 Thin Films with AlN Buffer Layers. K.Tsujimoto, H.Shimakage, Z.Wang, N.Kaya: Physica C, 2005, 426-431[2], 1464-8