The behaviour of In in heavily As-doped polycrystalline material was investigated by using 111In-111Cd perturbed angular correlation techniques. The In tracer was introduced by means of grain boundary diffusion or ion implantation. The in-diffused tracer probed only grain boundaries, giving rise to a broad distribution of static quadrupole frequencies. The implanted tracer probed only bulk material, where it encountered dopant As during annealing and formed known In-As complexes; together with a new one which involved three As atoms on nearest-neighbour sites with respect to the probe.

Probing Grain Boundaries in As-Doped Polycrystalline Silicon H.Metzner, M.Seibt, L.Ziegeler, M.Uhrmacher, T.Hahn: Hyperfine Interactions, 1999, 120-121[1-4], 383-8