The deposition of Se and GaSe onto Si(111)-(7 x 7) surfaces was studied by means of low-energy electron diffraction, X-ray photo-electron spectroscopy and X-ray photo-electron diffraction. The room-temperature deposition of Se resulted in an amorphous film, and subsequent annealing led to Se evaporation; without ordering or interdiffusion. The deposition of Se at 450C saturated at a sub-monolayer coverage, with no diffusion of Se into the substrate. There was no clear evidence for ordered Se sites.

Interaction of Se and GaSe with Si(111) S.Meng, B.R.Schroeder, M.A.Olmstead: Physical Review B, 2000, 61[11], 7215-8