The time evolution of Si concentration profiles in polycrystalline alpha-Ti was studied at temperatures ranging from 650 to 800C. The diffusion couples were created by ion implantation and the time-dependent concentration profiles were monitored using nuclear resonance broadening techniques and the 30Si(p,γ)31P reaction. The results (table 282) could be described by the expression:
D(cm2/s) = 4.4 x 10-7exp[-1.09(eV)/kT]
The results were explained in terms of Ti silicide formation.
J.Räisänen, J.Keinonen: Applied Physics Letters, 1986, 49[13], 773-5
Table 281
Diffusivity of Pd in α-Ti
Temperature (K) | D (m2/s) |
723 | 2.5 x 10-22 |
773 | 3.5 x 10-21 |
823 | 5.4 x 10-20 |
873 | 4.2 x 10-19 |
923 | 3.3 x 10-18 |
973 | 2.5 x 10-17 |
1023 | 8.8 x 10-17 |
1073 | 4.2 x 10-16 |