The H-induced passivation and modification of radiation-defect electrical activity were studied by means of deep-level transient spectroscopy. The H was incorporated into high-energy electron-irradiated crystals during etching in acid solutions at room temperature. This was followed by reverse-bias annealing of p-type samples at 380K. It was observed that the concentrations of the major radiation defects (divacancies, A-centres, K-centres) were reduced in H-rich regions, while a number of novel H-related deep-level centres appeared. Complexes with an energy level at Ev + 0.28eV were formed by hydrogenation of the K-centres.

Hydrogen Interaction with Defects in Electron-Irradiated Silicon O.Feklisova, N.Yarykin, E.Yakimov, J.Weber: Physica B, 1999, 273-274, 235-8